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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type ( F3W90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter 2SK2667 OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55150 150 900 }30 3 6 3 65 3 48 4.8 0.8 Unit V A W A mJ Nm Pulse width10Es, Duty cycle1/100 Tch = 150 Tch = 25 Tch = 25 i Recommended torque F0.5 Nm j Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage AEjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2667 ( F3W90HVX2 ) Min. 900 1. 5 2. 5 Typ. Max. 250 }0. 1 Unit V EA S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V ID = 1. 5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ ID = 1. 5A, RL = 100, VGS = 10V 2. 5 3. 5 3. 0 30 630 16 67 40 140 4. 7 3. 5 1. 5 1. 92 /L nC pF 70 230 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2667 6 Tc = -55C 5 Transfer Characteristics 25C Drain Current ID [A] 4 100C 3 150C 2 1 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2667 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2667 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2667 10 Safe Operating Area 100s 200s 1 Drain Current ID [A] 1ms R DS(ON) limit 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2667 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2667 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2667 10000 Capacitance 1000 Ciss Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2667 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 70 IAS = 3A 10 EAR = 4.8mJ EAS = 48mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2667 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2667 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 200V 100V 200 15 300 10 5 100 ID = 3A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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